RH1016M 1 rh1016fa burn-in circuit description ultrafast precision 10ns comparator l , lt, ltc and ltm are registered trademarks of linear technology corporation. ultrafast is a trademark of linear technology corporation. all other trademarks are the property of their respective owners. absolute maximum ratings (note 1) positive supply voltage (note 5).................................7v negative supply voltage ...........................................C7v differential input voltage (note 7).............................5v +in, Cin and latch enable current (note 7) ....10ma output current (continuous) (note 7) .................20ma operating temperature range................ C55c to 125c storage temperature range ................... C65c to 150c lead temperature (soldering, 10 sec) .................. 300c package information the rh1016 is an ultrafast tm 10ns comparator that inter- faces directly to ttl/cmos logic while operating from either 5v or single 5v supplies. tight offset voltage speci? ca tions and high gain allow the rh1016 to be used in precision applications. matched complementary outputs further extend the versatility of this comparator. a unique output stage provides active drive in both direc- tions for maximum speed into ttl/cmos logic or passive loads, yet does not exhibit the large current spikes found in conventional output stages. this allows the rh1016 to remain stable with the outputs in the active region which greatly reduces the problem of output glitching when the input signal is slow moving or is low level. the rh1016 has a latch pin which will retain input data at the outputs, when held high. quiescent negative power supply current is only 3ma. this allows the negative supply pin to be driven from virtually any supply voltage with a simple resistive divider. device performance is not affected by variations in negative supply voltage. the wafer lots are processed to linear technologys in- house class s ? ow to yield circuits usable in stringent military applications. 5.11k f1 f2 v4 monitor v3 monitor gnd monitor notes: 1. unless otherwise specified, component tolerances shall be per military specification. 2. t j = 161c maximum 3. t c = 139c minimum 4. t a = 100c minimum burn-in voltages: v4 = 5.5v to 6v v3 = C5.5v to C6v gnd power v4 v3 1k 5.11k t. p . 20 20 rh1016 burn-in 1 2 3 4 5 10 9 8 7 6 t. p . t. p . t. p . top view w package 10-lead cerpac 1 5 4 3 2 10 6 7 8 9 q out nc latch enable gnd q out v + nc v C Cin +in
RH1016M 2 rh1016fa table 1: electrical characteristics (preirradiation) v + = 5v, v C = C5v, v out(q) = 1.4v, v latch = 0v, unless otherwise noted. symbol parameter conditions notes min typ max sub- group min typ max sub- group units v os input offset voltage r s 100 2 1 3 1 4 2, 3 mv v os t input offset voltage drift 4v/c i os input offset current 2 0.3 1 1 1.3 2, 3 a i b input bias current 3 5 10 1 13 2, 3 a input voltage range single 5v supply 6 6 C3.75 1.25 3.5 3.5 v v cmrr common mode rejection C3.75v v cm 3.5v 1 80 90 2, 3 db psrr supply voltage rejection positive supply 4.6v v + 5.4v 60 75 1 54 2, 3 db negative supply C7v v C C2v 80 100 1 80 2, 3 db a v small-signal voltage gain 1v v out 2v 1400 3000 4 v/v v oh output high voltage v + 4.6v, i out = 1ma 1 2.65 3.2 2, 3 v i out = 10ma 1 2.40 3 2, 3 v v ol output low voltage i sink = 4ma 1 0.3 0.55 2, 3 v i + positive supply current 1 25 35 2, 3 ma i C negative supply current 1352,3ma v ih latch pin high input voltage 2v v il latch pin low input voltage 0.8 v i il latch pin current v latch = 0v 1 500 2, 3 a t pd propagation delay v in = 100mv, od = 5mv 4 10 14 4 16 5 ns v in = 100mv, od = 20mv 49124 155ns t a = 25c C55c t a 125c
RH1016M 3 rh1016fa note 1: stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. exposure to any absolute maximum rating condition for extended periods may affect device reliability and lifetime. note 2: input offset voltage is de? ned as the average of the two voltages measured by forcing ? rst one output, then the other to 1.4v. input offset current is de? ned in the same way. note 3: input bias current (i b ) is de? ned as the average of the two input currents. note 4: t pd and t pd cannot be measured in automatic handling equipment with low values of overdrive. the rh1016 is sample tested with a 1v step and 500mv overdrive. correlation tests have shown that t pd and table 1a: electrical characteristics (postirradiation) t a = 25c, v + = 5v, v C = C5v, v out(q) = 1.4v, v latch = 0v, unless otherwise noted. symbol parameter conditions notes min max min max min max min max min max units v os input offset voltage r s 100 2 4 4.5 5 5.5 6 mv i os input offset current 2 2 2.5 5 8 12 a i b input bias current 3 12 12 14 17 20 a input voltage range single 5v supply 6 6 C3.75 1.25 3.5 3.5 C3.75 1.25 3.5 3.5 C3.75 1.25 3.5 3.5 C3.75 1.25 3.5 3.5 C3.75 1.25 3.5 3.5 v v cmrr common mode rejection ratio C3.75v v cm 3.5v 80 77 74 70 65 db psrr supply voltage rejection positive supply 4.6v v + 5.4v 60 58 56 53 50 db negative supply C7v v C C2v 78 76 74 72 70 db a v small-signal voltage gain 1v v out 2v 1300 1200 1100 1000 900 v/v v oh output high voltage v + 4.6v, i out = 1ma 2.65 2.65 2.64 2.63 2.60 v i out = 10ma 2.40 2.40 2.39 2.38 2.35 v v ol output low voltage i sink = 4ma 0.55 0.55 0.56 0.57 0.6 v i + positive supply current 35 35 35 35 35 ma i C negative supply current 5 5 5 5 5 ma i il latch pin current v latch = 0v 525 575 650 725 800 a t pd propagation delay v in = 100mv, od = 5mv 41616161616ns v in = 100mv, od = 20mv 41414141414ns 10krad(si) 20krad(si) 50krad(si) 100krad(si) 200krad(si) t pd limits shown can be guaranteed with this test if additional dc tests are performed to guarantee that all internal bias conditions are correct. for low overdrive conditions, v os is added to overdrive. note 5: electrical speci? cations apply only up to 5.4v. note 6: input voltage range is guaranteed in part by cmrr testing and in part by design and characterization. see the lt1016 data sheet for discussion of input voltage range for supplies other than 5v or 5v. note 7: this parameter is guaranteed to meet speci? ed performance through design and characterization. it has not been tested.
RH1016M 4 rh1016fa table 2: electrical test requirements mil-std-883 test requirements subgroup final electrical test requirements (method 5004) 1*,2,3,4,5 group a test requirements (method 5005) 1*,2,3,4,5 group b and d for class s, end point electrical parameters (method 5005) 1,2,3 *pda applies to subgroup 1. see pda test notes. pda test notes the pda is speci? ed as 5% based on failures from group a, subgroup 1, tests after cooldown as the ? nal electrical test in accordance with method 5004 of mil-std-883. the veri? ed failures of group a, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. linear technology corporation reserves the right to test to tighter limits than those given. total dose bias circuit 1 2 3 4 5 6 7 14 13 12 11 10 9 8 v + +in Cin v C nc q q gnd en nc rh1016 w10 to fp14 r1 5.11k v + 5v v C C5v rh1016 bias c1 0.01f r3 5.11k r2 1k c2 0.01f
RH1016M 5 rh1016fa information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. typical performance characteristics positive supply current negative supply current total dose krad (si) 1 22 positive supply current (ma) 30 32 34 10 100 1000 rh1016 g01 28 26 24 v s = 5v total dose krad (si) 1 C3.0 negative supply current (ma) C2.0 C1.0 10 100 1000 rh1016 g02 C4.0 C3.5 C2.5 C1.5 C4.5 C5.0 v s = 5v total dose krad (si) 1 3.1 output high voltage (v) 3.3 3.5 10 100 1000 2.9 3.0 3.2 3.4 2.8 2.7 v s = 5v i out = 1ma rh1016 g03 output high voltage output high voltage output low voltage common mode rejection ratio total dose krad (si) 1 2.8 output high voltage (v) 3.0 3.3 3.2 10 100 1000 2.6 2.7 2.9 3.1 2.5 2.4 v s = 5v i out = 10ma rh1016 g04 total dose krad (si) 1 0.30 output low voltage (v) 0.40 0.50 10 100 1000 0.20 0.25 0.35 0.45 0.15 0.10 v s = 5v i out = 4ma rh1016 g05 total dose krad (si) 1 100 common mode rejectiion ratio (db) 110 120 10 100 1000 90 95 105 115 85 80 v s = 5v C3.75v v cm 3.5v rh1016 g06 input bias current input offset current total dose krad (si) 1 4 input bias current (a) 5 6 7 8 10 100 1000 rh1016 g07 3 2 1 0 9 10 v s = 5v total dose krad (si) 1 4 input bias current (a) 5 6 7 8 10 100 1000 rh1016 g07 3 2 1 0 9 10 v s = 5v
RH1016M 6 rh1016fa linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 fax: (408) 434-0507 www.linear.com ? linear technology corporation 2007 lt 0508 rev a ? printed in usa i.d. no. 66-10-1016 typical performance characteristics small-signal voltage gain positive power supply rejection ratio total dose krad (si) 1 500 small-signal voltage gain (v/v) 2000 2500 3000 10 100 1000 rh1016 g10 1500 1000 v s = 5v 1v v out 2v total dose krad (si) 1 70 positive power supply rejection ratio (db) 80 90 10 100 1000 rh1016 g11 60 65 75 85 55 50 v C = C5v 4.6v v + 5.4v negative power supply rejection ratio total dose krad (si) 1 100 negative power supply rejection ratio (db) 110 120 10 100 1000 90 95 105 115 85 80 v + = 5v C7v v C C2v rh1016 g12 input offset voltage total dose krad (si) 1 C1.0 input offset voltage (mv) 0 1.0 10 100 1000 rh1016 g09 C2.0 C3.0 3.0 2.0 C1.5 C0.5 0.5 C2.5 2.5 1.5 v s = 5v r s 100 latch pin current total dose krad (si) 1 C300 latch pin current (a) C250 C200 C150 C100 10 100 1000 rh1016 g13 C350 C400 C450 C500 C50 0 v s = 5v v latch = 0v
|
